CHARACTERIZATION METHODS OF SUBMICRON MOSFETS

Le Monde En Tique

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Ouvrage 9780792396956 : CHARACTERIZATION METHODS OF SUBMICRON MOSFETS
The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a
key component in modern microelectronics. During the last decade, device
physicists, researchers and engineers have been continuously faced with
new elements making the task of MOSFET characterization increasingly
crucial, as well as more difficult. The progressive miniaturization of devices
has caused several phenomena to emerge and modify the performance of
scaled-down MOSFETs. Localized degradation induced by hot carrier
injection and Random Telegraph Signal (RTS) noise generated by individual
traps are examples. It was thus unavoidable to develop new models and
new characterization methods, or at least adapt the existing ones to cope
with the special nature of these new phenomena.
Characterization Methods for Submicron MOSFETs deals with
techniques which show high potential for characterization of submicron
devices. Throughout the book the focus is on the adaptation of such
methods to resolve measurement problems relevant to VLSI devices and
new materials, especially Silicon-on-Insulator (SOI).
Characterization Methods for Submicron MOSFETs was written to
provide help to device engineers and researchers to enable them to cope
with the challenges they face. Without adequate device characterization,
new physical phenomena and new types of defects or damage may not be
well identified or dealt with, leading to an undoubted obstruction of the
device development cycle.
Audience: Researchers and graduate students familiar with MOS device
physics, working in the field of device characterization and modeling. Also
intended for industrial engineers working in device development, seeking to
enlarge their understanding of measurement methods. The book additionally
addresses device-based characterization for material and process engineers
and for circuit designers. A valuable reference that may be used as a text for
advanced courses on the subject.
Contents
Preface. 1. Static Measurements and Parameter Extraction. 2. Small Signal
Characterization of VLSI MOSFETs. 3. Charge Pumping. 4. Deep Level
Transient Spectroscopy. 5. Individual Interface Traps and Telegraph Noise.
6. Characterization of SOI MOSFETs. 7. Modern Analog IC
Characterization Techniques. Index.

Auteur : HADDARA
Editeur : KLUWER
Nombre de pages : 0
Date de publication : 01 1996

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